- Milaim Zabeli
Faculty of Electrical and Computer Engineering, University of Prishtina, Prishtina, Kosovo
- Nebi Caka
Faculty of Electrical and Computer Engineering, University of Prishtina, Prishtina, Kosovo
- Myzafere Limani
Faculty of Electrical and Computer Engineering, University of Prishtina, Prishtina, Kosovo
- Qamil Kabashi
Faculty of Electrical and Computer Engineering, University of Prishtina, Prishtina, Kosovo
Volume 2 - No: 3
The impact transconductance parameter and threshold voltage of MOSFET’s in static characteristics of CMOS inverter
DOI: 10.28978/nesciences.358859
Keywords: CMOS inverter, threshold voltage, voltage critical value, noise margins, transconductance parameter.
Abstract
The objective of this paper is to research the impact of electrical and physical parameters that characterize the complementary MOSFET transistors (NMOS and PMOS transistors) in the CMOS inverter for static mode of operation. In addition to this, the paper also aims at exploring the directives that are to be followed during the design phase of the CMOS inverters that enable designers to design the CMOS inverters with the best possible performance, depending on operation conditions. The CMOS inverter designed with the best possible features also enables the designing of the CMOS logic circuits with the best possible performance, according to the operation conditions and designers’ requirements.